dual n-c hannel e nhancement mode f ield e ffect t rans is tor ab s olut e maximum r at ing s (t a =25 c unles s otherwis e noted) t he r mal c har ac t e r is t ic s t hermal r es is tance, j unction-to-ambient r j a 41.5 /w c a s amhop microelectronics c orp. 1 p r oduc t s ummar y v ds s i d r ds (on) ( m ) max 30v 7.6a 23 @ v g s = 10v 35 @ v g s = 4.5v s t a6610 nov.24 2006 1 2 3 4 8 7 6 5 s 1 g 1 s 2 g 2 d 1 d 1 d 2 d 2 1 p dip -8 p arameter s ymbol unit drain-s ource voltage v ds v g ate-s ource voltage v g s v drain c urrent-c ontinuous @ t a -p uls ed i d a a a w i dm drain-s ource diode f orward c urrent i s maximum p ower dis s ipation p d operating j unction and s torage temperature r ange t j , t s t g -55 to 150 c a a a b 25 c 70 c t a= 25 c t a=70 c a n-channel 1.7 20 7.6 30 3 30 6 2 s urface mount p ackage. f e at ur e s s uper high dens e cell des ign for low r ds (on ). r ugged and reliable. e s d p rotected.
s t a 6610 p arameter s ymbol c ondition min typ max unit of f c har ac t e r is t ic s drain-s ource b reakdown voltage b v ds s = v g s 0v, i d 250ua = 30 v zero g ate voltage drain c urrent i ds s v ds 24v, v g s 0v = = 1 g ate-b ody leakage i g s s v g s 20v, v ds 0v = = 10 ua on c har ac t e r is t ic s b g ate t hres hold voltage v g s (th) v ds v g s , i d = 250ua = 1.0 3 v drain-s ource on-s tate r es is tance r ds (on) v g s 10v, i d 7a v g s 4.5v, i d =5a 35 on-s tate drain c urrent i d(on) v ds = 15v, v g s = 10v a s f orward trans conductance f s g v ds 10v, i d dy namic c har ac t e r is t ic s c input c apacitance c is s c r s s c os s output c apacitance r evers e trans fer c apacitance v ds =15v, v g s = 0v f =1.0mh z p f p f p f s wit c hing c har ac t e r is t ic s c turn-on delay time r is e time turn-off delay time t d(on) t r t d(of f ) t f v dd = 15v, i d = 7a, r l=2.1 ohm, v g s = 10v, r g e n = 6 ohm ns ns ns ns total g ate c harge g ate-s ource c harge g ate-drain c harge q g q gs q gd v ds =15v, i d = 7a, v g s =10v nc nc nc c f all t ime == = = =7a 2 5 23 ua m ohm m ohm v ds =15v, i d =7a,v g s =10v nc v ds =15v, i d =7a,v g s =4.5v 620 190 115 14.4 40 8.4 13 6.8 1.5 3.5 20 15 13 e l e c t r ic al c har ac t e r is t ic s (t a 25 c unles s otherwis e noted) = 1.8 17 23
figure 1. output characteristics figure 2. transfer characteristics v gs , gate-to-source voltage (v) v ds , drain-to-source voltage (v) i d , drain current(a) i d , drain current (a) 3 5 4032 24 16 80 0 0.5 1 1.5 2 2.5 3 v gs =3v 20 16 12 84 0 0 0.7 1.4 2.1 2.8 3.5 4.2 tj=125 c parameter symbol condition min typ max unit electrical characteristics (t a =25 c unless otherwise noted) drain-source diode characteristics diode forward voltage v sd v b c notes c.guaranteed by design, not subject to production testing. b.pulse test:pulse width 300 ? s, duty cycle 2%. a.surface mounted on fr4 board, t 10sec. v gs =3.5v s t a6610 v gs =4.5v v gs =4v v gs =10v -55 c 25 c i d , drain c urrent (a) r ds (on) ( m ) 48 40 32 24 16 81 f igure 3. on-r es is tance vs . drain c urrent and g ate v oltage 8 16 24 32 40 1 v g s =10v v g s =4.5v f igure 4. on-r es is tance variation with drain c urrent and temperature on-r es is tance r ds (on) , normalized 1.75 1.60 1.45 1.30 1.15 1.00 0.85 -25 0 25 50 150 t j( c ) 125 75 100 v g s =10v i d =7a t j, j unction t emperature ( c ) v g s =4.5v i d =5a v gs =2.5v v g s = 0v, is =1.7a 0.8 1.2
f igure 6. b reakdown v oltage v ariation with t emperature v th, normalized g ate-s ource t hres hold v oltage b v ds s , normalized drain-s ource b reakdown v oltage is , s ource-drain current (a) f igure 8. b ody diode f orward v oltage v ariation with s ource c urrent v s d , b ody diode f orward v oltage (v ) t j, j unction t emperature ( c ) t j, j unction t emperature ( c ) 4 6 20.0 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =250ua -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =250ua v g s , g ate-s ource voltage (v ) r ds (on) ( m ) 60 50 40 30 20 10 0 f igure 7. on-r es is tance vs . g ate-s ource v oltage 2 4 6 8 10 0 f igure 5. g ate t hres hold v ariation with t emperature 25 c 75 c i d =7a s t a6610 125 c 25 c 125 c 75 c
6 v g s , g ate to s ource v oltage (v ) q g, t otal g ate c harge (nc ) 10 86 4 2 0 0 2 4 6 8 10 12 14 16 v ds =15v i d =7a f igure 11.s witching characteris tics r g, g ate r es is tance ( ) s witching t ime (ns ) 100 10 1 1 6 10 60 100 60 600 300 250 t d(on) t d(off) t r t f v ds =15v ,id=7a v g s =10v 5 s t a6610 f igure 8. c apacitance v ds , drain-to source voltage (v) c, capacitance (pf) 900750 600 450 300 150 0 0 5 10 15 20 25 30 ciss coss crss f igure 10. maximum s afe o perating area v ds , drain-s ource v oltage (v ) i d , drain c urrent (a) 40 10 1 1 0.1 0.03 0.1 1 10 30 50 r ds (o n ) l i m i t 10ms 1 00 ms 1s dc v g s =10v s ingle p uls e t a =25 c f igure 9. g ate c harge 0.01 0.1 1 9 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve normalized transient thermal resistance single pulse p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t) 4. duty c ycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05
3.68 4.37 5.08 6 STA6610 pdip 8 package outline dimensions min nom max 0.51 - - 3.18 3.30 3.43 0.23 0.30 0.36 1.14 1.52 1.78 0.76 0.99 1.14 3.18 3.35 3.56 2.29 2.54 2.79 0.76 1.14 1.52 6.22 6.35 6.48 7.11 - - 7.87 8.26 9.27 9.47 9.80 10.16 7.62 7.87 8.13 0.38 0.46 0.53 a .145 .172 .200 a1 .020 - - c .009 .012 .014 b .015 .018 .021 a2 .125 .130 .135 d .373 .386 .400 e .090 .100 .110 l .125 .132 .140 b3 .030 .039 .045 b2 .045 .060 .070 d1 .030 .045 .060 e .300 .310 .320 e1 .245 .250 .255 ea .280 - - eb .310 .325 .365 symbol min nom max inches millimeters
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